| PART |
Description |
Maker |
| 2SK2038 K2038 |
2SK2038
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型（高速，高电流开关应用）
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| HN1L02FU E001983 |
N CHANNEL MOS TYPE/ P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor
|
NEC, Corp.
NEC[NEC]
|
| GT80J101 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| GT60M301 E001942 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| TK40X10J1 |
Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS?
|
Toshiba Semiconductor
|
| 2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS type field effect transistor
|
NEC[NEC]
Toshiba Semiconductor
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| TPC8016-H |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
|
Toshiba Corporation
Toshiba Semiconductor
|
